| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a highly reliable nonvolatile semiconductor memory device in which an electric field applied to an oxide film in erase operation can be relaxed while preventing an increase in chip area. <P>SOLUTION: In this nonvolatile semiconductor memory device, a word line voltage supply circuit 12 is constituted so that control gates of memory cell transistors of the same row of a memory cell array 11 are connected mutually and made into a common word line and word line voltage can be supplied to the word line successively raises an absolute value of erase word line voltage supplied to the word line connected to the memory cell transistor to be erased and in a fixed period in the erase operation, a channel voltage supply circuit 15 constituted so that channel voltage can be supplied to a channel region of the memory cell transistor successively raises an absolute value of erasure channel voltage supplied to the channel region of the memory cell transistor to be erased can be raised in a fixed period in the erasing operation. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
