| 摘要 |
PROBLEM TO BE SOLVED: To execute more faithful simulation for an integrated circuit provided with a nonvolatile memory. SOLUTION: For a stack type nonvolatile memory 20 for storing electric charges in a floating gate and storing a logic state by a characteristic observation tool 31, voltage current characteristics when a stored electric charge amount is a prescribed value are observed and the characteristics are displayed at a graph display part 35 as a first graph [1]. When a prescribed parameter is set at a parameter setting part 33, the characteristics corresponding to the parameter are superimposed on the first graph [1] and displayed as a second graph [2]. The parameter when both graphs are approximate is stored in a reference parameter storage 36. After adjusting a reference parameter in a parameter adjusting part 37 so as to parallelly move the graph along a voltage axis for a desired amount, the simulation by a circuit simulator 38 is executed on the basis of the adjusted parameter. COPYRIGHT: (C)2005,JPO&NCIPI
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