| 发明名称 |
[METHOD OF INCREASING CELL RETENTION CAPACITY OF SILICON NITRIDE READ-ONLY-MEMORY CELL] |
| 摘要 |
A method of increasing the cell retention capacity of a silicon nitride read-only-memory on a wafer. The method includes carrying out a baking process after performing the last plasma treatment of the wafer but before a wafer sort test.
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| 申请公布号 |
US2005026309(A1) |
申请公布日期 |
2005.02.03 |
| 申请号 |
US20040709603 |
申请日期 |
2004.05.17 |
| 申请人 |
CHUANG KUEN-CHI;LIU CHEN-CHIN;CHEN JIONG-ZHONG |
发明人 |
CHUANG KUEN-CHI;LIU CHEN-CHIN;CHEN JIONG-ZHONG |
| 分类号 |
H01L21/28;H01L21/66;(IPC1-7):H01L21/66;H01L21/336 |
主分类号 |
H01L21/28 |
| 代理机构 |
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