Semiconductor light-emitting device

摘要

A semiconductor light-emitting device includes a semiconductor light-emitting thin film, the thickness h of which satisfies the following conditional equation: 1 $0.9x\left(2m+1\right)\frac{{\mathrm{lambda}}_0}{4n}\leqq h\leqq 1.1x\left(2m+1\right)\frac{{\mathrm{lambda}}_0}{4n}$ and m in the conditional equation satisfies the following conditional equation: 2 $\frac{2m+1}{m\left(m+1\right)}\frac{{\mathrm{lambda}}_0}{2}>\mathrm{xi}$ where lambda0 is a center wavelength of light generated in the semiconductor light-emitting thin film, n is a refractive index of the semiconductor light-emitting thin film, m is 0 or a positive integer, and xi is a half bandwidth of a light emission spectrum when there is no interference between light rays generated in the semiconductor light-emitting thin film.