MANUFACTURING METHOD OF COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a compound semiconductor device that has high active strength and high setting accuracy of an oscillating wavelength. SOLUTION: This is a manufacturing method for a compound semiconductor device that has a detection step of irradiating an energy wave to a first semiconductor layer of a group III-V compound composed of one or more group III elements and two or more group V elements including at least hydrogen to detect a first crystallization state of the first semiconductor layer, and an annealing step of annealing the first semiconductor layer having the first crystallization state to modify it to a second semiconductor layer having a second crystallization state. COPYRIGHT: (C)2005,JPO&NCIPI