发明名称 |
Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same |
摘要 |
To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/mxK or higher and a thermal expansion coefficient of 20x10<-6>/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al-SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al-SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere. |
申请公布号 |
US2005025654(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040923782 |
申请日期 |
2004.08.24 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YAMAGATA SHINICHI;ABE YUGAKU;IMAMURA MAKOTO;FUKUI AKIRA;TAKANO YOSHISHIGE;TAKIKAWA TAKATOSHI;HIROSE YOSHIYUKI |
分类号 |
B22F3/24;C22C1/05;C22C1/10;C22C21/00;C22C32/00;C25D17/16;H01L21/48;H01L23/14;H01L23/15;(IPC1-7):B22F3/12 |
主分类号 |
B22F3/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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