| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN semiconductor in which defects can be suppressed to the degree capable of being used for an electronic device. SOLUTION: The GaN semiconductor includes a c-GaN single crystal film 5 having a thickness of about 1-10μm, and is formed sequentially via a 3C-SiC single crystal layer 3 having a thickness of about 100 nm to 1μm and a BGaN mixed crystal layer 4 having a thickness of about 1-20 nm, on a single crystal Si substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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