| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electron projection lithography method which appropriately corrects variations in the optimum dose caused by the proximity effect and has improved line width control. <P>SOLUTION: A reference bias is determined on condition that the dose (reference dose, reference dose level) on the surface of a sensitive substrate, which is assumed to be able to obtain a predetermined line width with no mask bias correction, has a margin, which is an indicator of variations in the line width caused by unexpected variations in the dose, of 5 nm/μC/cm<SP>2</SP>or less. On the basis of the reference bias, the amount of mask bias for each element of a pattern is calculated, and correction is made to give dimensional change (reshaping) to each element. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
