| 摘要 |
PROBLEM TO BE SOLVED: To prevent overlay deviation and size variation when two kinds of impurity regions are formed by ion implantation with no common implantation regions. SOLUTION: A first implantation prevention material 9 is deposited on a silicon substrate 1. Then, the first implantation prevention material is patterned by etching using a resist pattern 2 as a mask. After the removal of a resist, a first impurity region 4 is formed by a first ion implantation using the first implantation prevention material as a mask. A second implantation prevention material 10 is deposited by embedding the region where the first implantation prevention material has been etched. After the exposure of the first implantation prevention material by etching the second implantation prevention material, the pattern of the second implantation prevention material is formed by selectively etching the first implantation prevention material. After that, the second ion implantation impurity region 7 is formed by a second ion implantation using the pattern of the second implantation prevention material as a mask. COPYRIGHT: (C)2005,JPO&NCIPI
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