| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the coverage of an insulating film on wiring can be improved and wiring can be made finer by highly tapering the wiring and which can be improved in yield and suppressed in characteristic deterioration, and to provide a method of manufacturing the device. SOLUTION: The semiconductor device is formed with a semiconductor film and metal wiring 14 on a substrate. The metal wiring 14 is constituted in a laminated structure provided with a first metal layer 101 positioned at the uppermost part of the wiring 14 and a second metal layer 102 disposed under the metal layer 101 in contact with the layer 101. The first angleθa between the side face of the first metal layer 101 and the flat surface of the substrate and the second angleθb between the side face of the second metal layer 102 and the flat surface of the substrate in the cross section of the metal wiring 14 perpendicular to the extended direction of the wiring 14 can be adjusted depending upon the performing condition of dry etching. In addition, the first angleθa is smaller than the second angleθb. COPYRIGHT: (C)2005,JPO&NCIPI |
