METHOD FOR FORMING ANTIMONY-BASED QUANTUM DOT

摘要

PROBLEM TO BE SOLVED: To provide a method for forming antimony-based quantum dots on the surface of a compound semiconductor in a high density. SOLUTION: An antisurfactant is stuck on the compound semiconductor surface and antimony-based quantum dots are grown and formed on the compound semiconductor surface on which the antisurfactant stick. Specially, in a vacuum state, the compound semiconductor is heated to a specified temperature and irradiated with an antimony molecular beam and an antisurfactant molecular beam to stick the antisurfactant on the compound semiconductor surface, and then the compound semiconductor surface where the antisurfactant sticks is irradiated with an antimony molecular beam and a molecular beam of an element other than antimony constituting antimony-based quantum dots to grow and form antimony-based quantum dots. COPYRIGHT: (C)2005,JPO&NCIPI