发明名称 FORMING METHOD OF INORGANIC SOLID ELECTROLYTE
摘要 <P>PROBLEM TO BE SOLVED: To provide a forming method of sulfide group inorganic solid electrolyte restrained from change in quality with the passage of time thereof due to a reduction reaction of silicon even if made contact with metallic lithium. <P>SOLUTION: An inorganic solid electrolyte film substantially containing Li, P, and S, and not containing Si is formed on a substrate by heating the substrate with the temperature of not lower than 40&deg;C and not higher than 180&deg;C, or the substrate on which the thin film is formed is heated with a temperature not lower than 40&deg;C and not higher than 180&deg;C, after forming the inorganic solid electrolyte film substantially containing Li, P, and S, and not containing Si on the substrate with the temperature of 40&deg;C or less. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005032731(A) 申请公布日期 2005.02.03
申请号 JP20040259562 申请日期 2004.09.07
申请人 SUMITOMO ELECTRIC IND LTD 发明人 HISAGAI YUICHI;OTA YUKIHIRO
分类号 C23C14/58;H01B1/06;H01B13/00;H01M4/134;H01M4/1395;H01M10/052;H01M10/0562;H01M10/058 主分类号 C23C14/58
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