发明名称 |
Method for manufacturing semiconductor device, and laser irradiation apparatus |
摘要 |
It is an object of the present invention to provide a method for manufacturing a crystalline semiconductor film comprising the steps of crystallizing with the use of the metal element for promoting the crystallization to control the orientation and irradiating the laser once to form a crystalline semiconductor film having a small crystal grain arranged in a grid pattern at a regular interval. In the present invention made in view of the above object, a ridge forms a grid pattern on a surface of the crystalline semiconductor film in such a way that a crystalline semiconductor film is formed by adding the metal element for promoting the crystallization to the amorphous semiconductor film and the pulsed laser whose polarization direction is controlled is irradiated thereto. As the means for controlling the polarization direction, a half-wave plate or a mirror is used.
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申请公布号 |
US2005026401(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040900463 |
申请日期 |
2004.07.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SHIMOMURA AKIHISA;KOYAMA MASAKI;SHOJI HIRONOBU |
分类号 |
C30B13/24;H01L21/20;H01L21/77;H01L21/84;H01L29/04;H01L29/786;(IPC1-7):C30B1/00;H01L21/36 |
主分类号 |
C30B13/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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