发明名称 Method for improving film uniformity in plasma enhanced chemical vapor deposition system
摘要 A method for improving uniformity of a film in a plasma enhanced chemical vapor deposition system in a deposition chamber includes the following steps before a deposition procedure. Firstly, a cleaning procedure is performed to remove particles adhered onto an internal wall of the deposition chamber. Then, a pre-deposition procedure is performed to isolate contaminants generated during the clearing procedure. Afterward, a specified gas is introduced into the deposition chamber so as to stabilize a condition inside the deposition chamber.
申请公布号 US2005025906(A1) 申请公布日期 2005.02.03
申请号 US20030631134 申请日期 2003.07.31
申请人 LIN HUI-CHU LIN;LU WEN-CHENG 发明人 LIN HUI-CHU LIN;LU WEN-CHENG
分类号 C23C16/44;(IPC1-7):H05H1/24 主分类号 C23C16/44
代理机构 代理人
主权项
地址