发明名称 |
Method for improving film uniformity in plasma enhanced chemical vapor deposition system |
摘要 |
A method for improving uniformity of a film in a plasma enhanced chemical vapor deposition system in a deposition chamber includes the following steps before a deposition procedure. Firstly, a cleaning procedure is performed to remove particles adhered onto an internal wall of the deposition chamber. Then, a pre-deposition procedure is performed to isolate contaminants generated during the clearing procedure. Afterward, a specified gas is introduced into the deposition chamber so as to stabilize a condition inside the deposition chamber.
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申请公布号 |
US2005025906(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030631134 |
申请日期 |
2003.07.31 |
申请人 |
LIN HUI-CHU LIN;LU WEN-CHENG |
发明人 |
LIN HUI-CHU LIN;LU WEN-CHENG |
分类号 |
C23C16/44;(IPC1-7):H05H1/24 |
主分类号 |
C23C16/44 |
代理机构 |
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主权项 |
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地址 |
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