发明名称 A METHOD FOR DRYING DEVELOPED PHOTORESIST IN SEMICONDUCTOR PROCESSING
摘要 Photoresist collapse in the development step of small feature size (135 nm and below) semiconductor wafer processing is eliminated by utilizing alcohol, with or without water in a mixture, at the step of removing developer and residual photoresist then drying the cleansing mixture.
申请公布号 WO2005010620(A1) 申请公布日期 2005.02.03
申请号 WO2003US20766 申请日期 2003.06.30
申请人 REYNOLDS, REESE, M. 发明人 REYNOLDS, REESE, M.
分类号 G03F7/32;G03F7/40;(IPC1-7):G03F7/32 主分类号 G03F7/32
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