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发明名称
Verfahren zur Dotierung der externen Basisanschlußgebiete von Si-basierten Einfach-Polysilizium-npn-Bipolartransistoren
摘要
申请公布号
DE19840866(B4)
申请公布日期
2005.02.03
申请号
DE19981040866
申请日期
1998.08.31
申请人
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
发明人
SCHMUNDT, HOLGER;KNOLL, DIETER;HEINEMANN, BERND
分类号
H01L21/225;H01L21/3215;H01L21/331;(IPC1-7):H01L21/223
主分类号
H01L21/225
代理机构
代理人
主权项
地址
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