发明名称 ETCHANT COMPRISING CUPRIC ION SOURCE, HYDROCHLORIC ACID AND AZOLE TO RESTRAIN UNDERCUT, REPLENISHMENT SOLUTION COMPRISING HYDROCHLORIC ACID AND AZOLE TO BE ADDED TO ETCHANT AND METHOD FOR PRODUCING COPPER WIRING USING THE SAME
摘要 PURPOSE: To provide an etchant and an replenishment solution that are capable of suppressing undercut and forming fine wiring patterns having high density, and a method for producing copper wiring using the etchant and the replenishment solution. CONSTITUTION: In an etchant of copper or copper alloy, the etchant is characterized in that it is an aqueous solution containing 14 to 155 g/L of cupric ion source as a copper ion concentration; 7 to 180 g/L of hydrochloric acid; and 0.1 to 50 g/L of azole having nitrogen atoms only as heteroatoms existing in a ring. In a replenishment solution added to the etchant when repeatedly using the etchant, the replenishment solution is characterized in that it is an aqueous solution containing 7 to 360 g/L of hydrochloric acid; and 0.1 to 50 g/L of azole having nitrogen atoms only as heteroatoms existing in a ring. In a method for producing wiring by etching copper or copper alloy, the method is characterized in that the wiring is formed by etching a portion of copper layer on an electric insulating material which is not coated with an etching resist by using the etchant, wherein the replenishment solution is added to the etchant when repeatedly using the etchant so that the copper or copper alloy is etched while maintaining concentration of copper ions in the etchant to 155 g/L or less.
申请公布号 KR20050012682(A) 申请公布日期 2005.02.02
申请号 KR20040057740 申请日期 2004.07.23
申请人 MEC CO., LTD. 发明人 KURODA, AI;MORINAGA, YUKARI;TESHIMA, TAKAHIRO;TODA, KENJI
分类号 C23F1/18;H05K3/06;(IPC1-7):C23F1/18 主分类号 C23F1/18
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