| 摘要 |
PURPOSE: A flat panel display device including a poly-crystal silicon TFT(Thin Film Transistor) is provided to satisfy electrical characteristics required for the flat panel display device by making the size of grain of poly-crystal silicon, included in an active channel region of a driving circuit part, different from that of grain thereof included in the active channel region of a pixel part. CONSTITUTION: A pixel part(20), divided by a gate line and a data line, includes a TFT driven by signals applied via the gate line and the data line. A driving circuit part(10), electrically connected to the gate line and the data line, includes at least one TFT for applying a signal to the pixel part. The average number of a grain boundary, formed in an active channel region of the TFT in the driving circuit part and met a direction line of electric current, is less than that of the grain boundary formed in the active channel region of the TFT in the pixel part and met the direction line thereof.
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