发明名称 |
PROTECTION CIRCUIT FOR WITHSTANDING SHORT-CIRCUIT OF INSULATED GATE TYPE POWER DEVICE, CAPABLE OF PREVENTING BREAKDOWN OF POWER DEVICE CAUSED DUE TO HIGH VOLTAGE OF POWER SOURCE UNIT UPON OCCURRENCE OF SHORT-CIRCUIT OF LOAD |
摘要 |
PURPOSE: A protection circuit is provided to prevent breakdown of a power device caused due to the high voltage of a power source unit upon occurrence of short-circuit of a load. CONSTITUTION: A protection circuit(200) comprises a pass transistor(210), a pull-down unit(220), and a reset diode(230). The pass transistor has a gate connected to a gate of an insulated gate type power device at a gate A, and transfers an anode voltage to a node B. The pull-down unit is connected between a gate electrode terminal of the insulated gate type power device and the node B, and pulls down the voltage of the node A when the voltage at the node B is higher than a threshold voltage. The reset diode lowers the voltage of the node B to zero when the voltage of the gate electrode terminal is zero.
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申请公布号 |
KR20050012901(A) |
申请公布日期 |
2005.02.02 |
申请号 |
KR20030051596 |
申请日期 |
2003.07.25 |
申请人 |
SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
CHOI, YEARN IK;HA, MIN WOO;HAN, MIN KOO;JEON, BYUNG CHUL;JI, IN HWAN |
分类号 |
H02H3/08;(IPC1-7):H02H3/08 |
主分类号 |
H02H3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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