METHOD FOR PLANARIZING INTERLAYER DIELECTRIC WITH GLOBAL PLANARIZATION CAPABILITY IN SEMICONDUCTOR DEVICE HAVING MIM PATTERN

摘要

PURPOSE: A method for planarizing an interlayer dielectric of a semiconductor device having MIM(Metal Insulator Metal) patterns is provided to be capable of obtaining global planarization capability. CONSTITUTION: A silicon substrate(21) defined with a first region(A) stacked sequentially metal patterns(23a,23b) and MIM patterns(25) thereon and a second region(B) having the metal patterns is prepared. An interlayer dielectric is formed on the entire surface of the resultant structure. A planarized interlayer dielectric(27a) is formed by selectively etching the interlayer dielectric overlapped with the MIM patterns. CMP(Chemical Mechanical Polishing) is then performed to obtain global planarization.