| 摘要 |
PURPOSE: A method for forming an isolation layer of semiconductor device is provided to prevent defects, such as bubble, lifting and active crack by filling a trench using two-step deposition processing. CONSTITUTION: A trench(54) is formed in a substrate(51) by using a pad oxide pattern(52) and a pad nitride pattern(53). A gap-fill oxide layer(57) is filled in the trench by two-step deposition processing using HDP-CVD(High Density Plasma Chemical Vapor Deposition). The two-step deposition processing is provided with a preliminary deposition step using a bias power of 1000W below to form a first oxide layer(57a) and a main deposition step using a bias power of 2500-2800W to form a second oxide layer(57b).
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