发明名称 LIGHT EMITTING DIODE HAVING VERTICAL ELECTRODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME TO DISSIPATE HEAT AND STATIC ELECTRICITY EFFICIENTLY
摘要 PURPOSE: A light emitting diode having a vertical electrode structure and a method for manufacturing the same are provided to increase the chip production per wafer and to dissipate heat and static electricity efficiently. CONSTITUTION: A conductive receptor substrate(13) has both surfaces of the upper and lower surface. A first electrode(16) is formed on the lower surface of the receptor substrate. Conductive adhesion layers(10,11) are formed on the upper surface of the receptor substrate. A first clad layer(6) is formed on the adhesion layer. A light emitting layer(5) is formed on the first clad layer. A second clad layer(4) is formed on the light emitting layer. A second electrode(15) is formed on the second clad layer.
申请公布号 KR20050013048(A) 申请公布日期 2005.02.02
申请号 KR20030100016 申请日期 2003.12.30
申请人 ITSWELL CO., LTD. 发明人 CHOI, YONG SEOK;HAN, YOUNG HEON;KIM, CHANG YEN;KIM, DON SOO;KIM, SEONG JIN;YU, SOON JAE
分类号 H01L33/02;H01L33/12;H01L33/22;(IPC1-7):H01L33/00 主分类号 H01L33/02
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