METHOD FOR FABRICATING SEMICONDUCTOR EPITAXIAL LAYER USING METAL ISLAND TO FABRICATE HIGH-QUALITY GaN LED OR GaN LASER DIODE

摘要

PURPOSE: A method for fabricating a semiconductor epitaxial layer using a metal island is provided to fabricate a high-quality GaN LED(light emitting device) or GaN laser diode by remarkably reducing a crystal defect and by improving lifetime and brightness of a device. CONSTITUTION: A substrate is prepared in a reaction furnace. The substrate is set at a temperature of 200-1300 deg.C. A gallium metal source is supplied to the substrate. The supplied gallium metal source is transformed into a gallium metal island on the substrate. After the supply of the gallium metal source is stopped, a nitrogen source is supplied to the gallium metal island. The gallium metal island is reacted with the nitrogen source to form a gallium nitride island. A GaN epitaxial layer is grown by using the gallium nitride island as a seed.