发明名称 |
Semiconductor process for disposable sidewall spacers |
摘要 |
A semiconductor process and structure (32) uses a disposable sidewall spacer (42) associated with lightly doped drain (LDD) transistors. The disposable sidewall spacers are efficiently removed by a gaseous fluorine ambient. Either molecular or atomic fluorine gas is used to remove a silicon germanium sidewall spacer with high selectivity to exposed insulating layers. This etch process is also isotropic. An additional benefit of using a gaseous fluorine ambient is incorporation of fluorine in isolation regions (48) surrounding the transistors, thereby reducing the dielectric constant. Improved insulating properties of the isolations regions can allow increased integration.
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申请公布号 |
US6849515(B1) |
申请公布日期 |
2005.02.01 |
申请号 |
US20030670634 |
申请日期 |
2003.09.25 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
TAYLOR, JR. WILLIAM J.;GARZA CESAR M. |
分类号 |
H01L21/3213;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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