METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING IMPROVED OPERATION STABILITY AND RELIABILITY

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve stability and reliability of operation by forming a stable metal contact irrespective of increase of topology of the device. CONSTITUTION: A first interlayer dielectric covering a bit line and a storage node contact plug penetrating the interlayer dielectric are formed on a substrate. A capacitor oxide layer is formed on the first interlayer dielectric. A capacitor hole exposing the storage node contact plug and a metal contact hole exposing the bit line are formed by etching the capacitor oxide layer using a mask. A storage node and a metal contact plug are formed by depositing a barrier metal and tungsten(41) on an overall structure. The surface is planarized until the tungsten mask is exposed. An oxide layer(42) and a cell open mask are formed on the overall structure.