METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING HOMOGENEOUS IMPURITY CONCENTRATIONS ON EDGE PORTION OF CHANNEL REGION

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the property of the device by removing characteristic variation of NMOS(N-type Metal Oxide Semiconductor) and PMOS transistors by homogenizing impurity concentrations on an edge portion of a channel region. CONSTITUTION: A pad oxide layer(21) and a nitride layer(22) are deposited on a semiconductor substrate(20). The nitride layer and the pad oxide layer are patterned to expose a portion of the substrate. A trench(23) is formed by etching the exposed substrate to a predetermined depth to define a field region and an active region. An impurity region(25) is formed on an edge portion in a width direction in a channel region of the active region.