CONTACT STRUCTURE OF SEMICONDUCTOR MEMORY DEVICE FOR PREVENTING DEFECTS THEREOF AND LOSS OF TOP ELECTRODE IN METAL LINE FABRICATION PROCESS AND FORMING METHOD THEREOF

摘要

PURPOSE: A contact structure of a semiconductor memory device and a forming method thereof are provided to prevent loss of a bottom face of a contact hole having a low aspect ratio in an over-etch process by forming a predetermined layer having a different from a property of an interlayer dielectric on the bottom face of the contact hole having the low aspect ratio. CONSTITUTION: A first conductive layer and a second conductive layer having a different height are formed on a semiconductor substrate(100). An interlayer dielectric is formed on the semiconductor substrate. A first contact hole and a second contact hole are formed within the interlayer dielectric to expose the first and second conductive layers. The depth of the first contact hole is shallower than the depth of the second contact hole. One or more layers of the first conductive layers are formed on a bottom face of the first contact hole.