发明名称 SEMICONDUCTOR DEVICE WITH FIRST CONNECTION BETWEEN CONTACT HOLES AND SECOND CONNECTION BETWEEN VIA HOLES ARRANGED IN STRAIGHT LINE FOR IMPROVING INTEGRATION DEGREE
摘要 PURPOSE: A semiconductor device is provided to improve the degree of integration by arranging a first connection between contact holes and a second connection between via holes in a straight line. CONSTITUTION: A semiconductor device includes a semiconductor substrate divided into an active region(11) and an isolation region(12), a plurality of contact holes(C) for contacting the active region of the substrate, a first connection for connecting the contact holes with each other, a plurality of via holes(V) and a second connection for connecting the via holes with each other. The first and second connections are arranged in the same straight line.
申请公布号 KR20050010660(A) 申请公布日期 2005.01.28
申请号 KR20030050041 申请日期 2003.07.22
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 RHEE, HYUNG JONG
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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