发明名称 |
SEMICONDUCTOR DEVICE WITH FIRST CONNECTION BETWEEN CONTACT HOLES AND SECOND CONNECTION BETWEEN VIA HOLES ARRANGED IN STRAIGHT LINE FOR IMPROVING INTEGRATION DEGREE |
摘要 |
PURPOSE: A semiconductor device is provided to improve the degree of integration by arranging a first connection between contact holes and a second connection between via holes in a straight line. CONSTITUTION: A semiconductor device includes a semiconductor substrate divided into an active region(11) and an isolation region(12), a plurality of contact holes(C) for contacting the active region of the substrate, a first connection for connecting the contact holes with each other, a plurality of via holes(V) and a second connection for connecting the via holes with each other. The first and second connections are arranged in the same straight line.
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申请公布号 |
KR20050010660(A) |
申请公布日期 |
2005.01.28 |
申请号 |
KR20030050041 |
申请日期 |
2003.07.22 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
RHEE, HYUNG JONG |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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