| 摘要 |
<p>The invention relates to a sensor for hydrogen detection. According to the invention, the sensor is provided with a resistive semiconductive layer which adsorbs hydrogen, consisting of an alumina medal (1) having, on the upper side, an interdigital electrode grid (2) which is laid serigraphically, said grid being made of gold paste and has the pitch of 1.5 mm, with the layout thickness of 0.5 mm and layer thickness of 35 ... 45 mium, said semiconductive layer being heat treated at 900 C for one hour, with a sensitive layer (3)as paste, consisting of semiconductive oxides: 88% SnO2, 10% TiO 2 doped with 1% Sb 2 O 3 and 1% PdCl 2, said layer having a thickness of 50 mium, heat treated at 550 C for one hour, and on the lower side of the medal (1) there is laid the heater (4) as resistive paste having the resistivity of 10 ohm/square , heat treated at 850 C for one hour, and on both sides of the medal (1) there are laid serigraphically conductive patterns (5) made up of Ag paste, the width of patterns being of 0.5 mm and the layer thickness of 35 ... 45 mium, heat treated at 800 C for one hour, and the connections (6) made up of Pd-Ag paste, heat treated at 750 C for 30 minutes, through which the heater is supplied.</p> |
