| 摘要 |
PROBLEM TO BE SOLVED: To suppress leakage current of a semiconductor device, in which a film which consists of a high melting-point metal, alloy which consisting of the high melting-point metal, and silicide of the high melting-point metal, nitride of Ti, Ta, W, and Ti-W alloy, is used for a contact barrier layer or a gate electrode or the like, for obtaining a highly reliable semiconductor device. SOLUTION: A method for manufacturing the semiconductor device includes the processes of removing Al from Ti-W material, preparing W material for a magnetron sputtering system whose concentration of Al is 1 ppm or lower, using the Ti-W material, and forming the contact barrier or the gate electrode layer, in which the Al content is suppressed to about 1×10<SP>18</SP>atoms/cm<SP>3</SP>or lower, expressed in terms of the number of the atoms, by a sputtering method. The bonding depth of a source-drain region is 0.3μm or shorter. COPYRIGHT: (C)2005,JPO&NCIPI
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