| 摘要 |
PROBLEM TO BE SOLVED: To provide a bidirectional thyristor that can be improved in sensitivity and can be prevented from making malfunctions. SOLUTION: In order to constitute the bidirectional thyristor, first, second, third, and fourth n-type semiconductor regions N1, N2, N3, and N4, and first and second p-type semiconductor regions P1 and P2, are provided in a semiconductor substrate 1. Then a first main electrode T1 and a gate electrode G1 are disposed on one principal surface 2 of the substrate 1, and a second main electrode T2 is provided on the other principal surface 3 of the substrate. In addition, a gate trigger current suppressor 10 composed of an n-type semiconductor is provided from the first n-type semiconductor region N1 to the surface 2 of the semiconductor substrate 1. The gate trigger current suppressor 10 is disposed between the portion of the first main electrode T1 disposed above the third n-type semiconductor region N3 and the gate electrode G in the top view of the thyristor. COPYRIGHT: (C)2005,JPO&NCIPI
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