发明名称 |
PROGRAMMABLE MAGNETIC MEMORY DEVICE FP-MRAM |
摘要 |
A memory device has an information plane (32) for storing data bits in a magnetic state of an electro-magnetic material at an array of bit locations (31). The device further has an array of electro-magnetic sensor elements (51) that are aligned with the bit locations. The information plane (32) is programmable or programmed via a separate magnetic writing device (21). In particular a read-only sensor element (60) is described for a read-only magnetic memory. |
申请公布号 |
WO2004032146(A3) |
申请公布日期 |
2005.01.27 |
申请号 |
WO2003IB04376 |
申请日期 |
2003.09.30 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;LENSSEN, KARS-MICHIEL, H. |
发明人 |
LENSSEN, KARS-MICHIEL, H. |
分类号 |
G11B5/00;G11B5/48;G11B5/49;G11C7/24;G11C11/16;G11C17/02;G11C17/14 |
主分类号 |
G11B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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