| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which blocking of dopant injection to a semiconductor substrate by a natural oxide film resulting from the atmospheric natural oxidation of unstable semiconductor atoms in amorphous sections on the surface layer of the semiconductor substrate can be prevented or suppressed, and the injection efficiency of dopant to the semiconductor substrate can be improved. SOLUTION: The method for manufacturing a semiconductor device is used to form a source/drain extension part in a semiconductor substrate. While the atmospheric pressure is being reduced, the surface layer of the semiconductor substrate is made amorphous by preamorphous injection (S2), and a dopant is injected to the amorphous part 1f (S3) to form the source/drain extension part in the surface layer of the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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