| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which ensures an enough gate breakdown voltage and is reduced in source resistance, and to provide its manufacturing method. SOLUTION: The semiconductor device is equipped with a semiconductor substrate 11 where a Schottky contact layer 15 and a cap layer 16 are successively formed in this sequence, a source electrode S and a drain electrode D formed on the cap layer 16, a first insulating film 17 deposited on the cap layer 16 between the source electrode S and the drain electrode D, a gate electrode G that fills the groove 20 cut in the Schottky contact layer 15 as deep as prescribed penetrating through the first insulating film 17 and has a lower end in contact with the Schottky contact layer 15, and a second insulating film 21 sandwiched between the wall composed of the Schottky contact layer 15 and the cap layer 16 and confronted with the groove 20 and the upper part of the gate electrode G. COPYRIGHT: (C)2005,JPO&NCIPI
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