MOS INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a MOS integrated circuit capable of obtaining a wide dynamic range and a high gain. SOLUTION: MOS transistors 11, 12 constitute a cascode amplifier circuit. The gate oxide film of the MOS transistor 12 is formed by using a process other than a process of forming the gate oxide film of the MOS transistor 11, and the thickness of the gate oxide film of the MOS transistor 12 is formed thinner than the thickness of the gate oxide film of the MOS transistor 11. Thus, the cascode amplifier circuit having a wide dynamic range and a high gain is realized. COPYRIGHT: (C)2005,JPO&NCIPI