METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO ELIMINATE WATER MARK

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to eliminate water mark by cleaning a hydrophobic dielectric material layer by a cleaning process using IPA(isopropyl alcohol). CONSTITUTION: A semiconductor substrate(110) is prepared which has various elements including a semiconductor device like a transistor or a capacitor. A hydrophobic dielectric material layer(112) is formed on the semiconductor substrate. The dielectric material layer is patterned to form a trench for a metal interconnection. After the trench is filled with a metal layer(114), a CMP(chemical mechanical polishing) process is performed to eliminate the metal layer on the dielectric material layer. The first cleaning process using IPA(116) is performed to clean the dielectric material layer and the metal layer. The second cleaning process using DI(deionized) water is performed to clean the dielectric material layer and the metal layer, and the remaining IPA is eliminated.