发明名称 |
Insulating barrier, NVM bandgap design |
摘要 |
An insulating barrier extending between a first conductive region and a second conductive region is disclosed. The insulating barrier is provided for tunnelling charge carriers from the first to the second region, the insulating barrier comprising a first portion contacting the first region and a second portion contacting the first portion and extending towards the second region, the first portion being substantially thinner than the second portion, the first portion being constructed in a first dielectric and the second portion being constructed in a second dielectric different from the first dielectric, the first dielectric having a lower dielectric constant than the second dielectric.
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申请公布号 |
US2005017288(A1) |
申请公布日期 |
2005.01.27 |
申请号 |
US20040880415 |
申请日期 |
2004.06.28 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM |
发明人 |
BLOMME PIETER;GOVOREANU BOGDAN;ROSMEULEN MAARTEN |
分类号 |
H01L21/28;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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