发明名称 Array transistor amplification method and apparatus for dynamic random access memory
摘要 As disclosed herein, a method and apparatus are provided for amplifying a signal by a transistor of an array of transistors that includes a storage cell transistor array of a dynamic random access memory (DRAM). According to the disclosed method, an array of transistors is provided including transistors of a storage cell transistor array of a dynamic random access memory array. A transistor of the array of transistors has a source or a drain coupled to a fixed potential. An input signal is applied to a gate of the transistor, whereby the transistor amplifies the input signal to provide an output signal appearing on the other of the source or drain of the transistor.
申请公布号 US2005018469(A1) 申请公布日期 2005.01.27
申请号 US20030625962 申请日期 2003.07.24
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 POECHMUELLER PETER
分类号 G11C7/06;G11C11/4091;H01L27/108;(IPC1-7):G11C11/24 主分类号 G11C7/06
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