| 发明名称 |
LASER BEAM MACHINING METHOD AND LASER BEAM MACHINING APPARATUS |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a laser beam machining method and a laser beam machining apparatus for smoothly removing a Low-k film on streets formed on a semiconductor substrate and a metal pattern for testing partially disposed on the street. <P>SOLUTION: The laser beam machining method for a semiconductor wafer 20 in which an insulator film 213 of low dielectric constant is layered on the surface of the semiconductor substrate 20, a plurality of circuits are formed by streets 211 formed in the lattice shape, and a metal pattern 214 for testing is partially arranged on the streets 211 includes a laser beam machining step of irradiating an area where the metal pattern 214 is located and an area of the insulator film 213 of low dielectric constant with laser beams under different machining conditions, thereby removing the metal pattern 214 and the insulator film 213 of low dielectric constant. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2005021940(A) |
申请公布日期 |
2005.01.27 |
| 申请号 |
JP20030190103 |
申请日期 |
2003.07.02 |
| 申请人 |
DISCO ABRASIVE SYST LTD |
发明人 |
SHIGEMATSU KOICHI;OMIYA NAOKI;YOSHIKAWA TOSHIYUKI |
| 分类号 |
B23K26/00;B23K26/04;B23K26/08;B23K26/36;B23K101/40;C30B1/00;H01L21/02;H01L21/20;H01L21/301;H01L21/302;H01L21/304;H01L21/3105;H01L21/311;H01L21/321;H01L21/3213;H01L21/68;H01L23/544;H05K3/02;(IPC1-7):B23K26/00 |
主分类号 |
B23K26/00 |
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