| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a ferroelectric memory device having an MTP-structured capacitor. SOLUTION: The method comprises the steps of forming a first insulation film 24 on a semiconductor substrate 21, forming a storage node contact penetrating the first insulation film 24 and coming into contact with part of the semiconductor substrate 21, forming the laminate structure of an lower electrode 32A and a hard mask to be connected to the storage node contact on the first insulation film 24, and forming the film of a layer for forming a second insulation film on the entire surface including the laminate structure. The method further comprises the steps of forming a second insulation film 34A by polishing and flattening the layer for forming a second insulation film until the surface of the hard mask is exposed, exposing the surface of the lower electrode 32A located below the surface of the second insulation film 34A by selectively removing the hard mask, and forming a ferroelectric film 35 and an upper electrode 36 sequentially on the lower electrode 32A and the second insulation film 34A. COPYRIGHT: (C)2005,JPO&NCIPI |
