| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is thin and excellent in a dimensional stability of a conductor pattern, and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the semiconductor device includes a step of forming a conductor pattern 1a by partly removing a metal plate 1; a step of adhering the metal plate 1 to a support 2, supplying a first insulating resin material 3 to an opposite surface of the support 2 to the adhered surface, and filling the first insulating resin material 3 in a removed part; a step of releasing the support 2 from the metal plate 1; a step of connecting a semiconductor chip 5 to the conductor pattern 1a; and a step of covering at least a connecting part of the conductor pattern 1a to the semiconductor chip 5 with a second insulating resin 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
