发明名称 Maintaining a reactor chamber of a chemical vapor deposition system
摘要 Maintaining a reactor chamber of a chemical vapor deposition system includes depositing layers on an inner surface of the reactor chamber, where the layers form an accumulation layer. When the accumulation layer reaches a specified thickness, a plasma clean cycle is performed by introducing cleaning gas into the reactor chamber. The volume of the cleaning gas used during one or more plasma clean cycles is calculated, where the volume indicates the volume of cleaning gas introduced into the reactor chamber. A notification is provided when the volume of the cleaning gas used during the plasma clean cycles has reached a predetermined volume.
申请公布号 US2005019963(A1) 申请公布日期 2005.01.27
申请号 US20030623757 申请日期 2003.07.21
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 ZHAO JIN;KRUSE NATHAN J.;BLANCO IGNACIO;BRUGLER MERCER L.
分类号 C23C16/44;C23C16/52;(IPC1-7):C23C16/00;C25F1/00;C25F5/00;H01L21/31;H01L21/66 主分类号 C23C16/44
代理机构 代理人
主权项
地址