Semiconductor device and method of fabricating same

摘要

A semiconductor device having CMOS circuits formed on a glass substrate. The CMOS circuits are composed of TFTs. Lightly doped regions are formed only in the N-channel TFTs. When P-channel TFTs are formed, the conductivity type of the lightly doped regions is converted by a boron ion implant. Each CMOS circuit consists of an N-channel TFT having the lightly doped regions and a P-channel TFT having no lightly doped regions.