Dynamic random access memory device, has read protection unit that supplies reset voltage that is higher than back-bias voltage to well region in response to externally supplied reset command

摘要

The device has a dynamic random access memory (DRAM) core with memory cells for storing data. The core has a well region (320) within which the memory cells are formed. The core has a back-bias voltage generator circuit for supplying voltage to the well region. A read protection unit supplies a reset voltage that is higher than the back-bias voltage to the well region in response to an externally supplied reset command. An independent claim is also included for a method for preventing data stored in memory from being read-out.