METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE TO INCREASE INTERVAL OF REFRESH TIME AND IMPROVE PERFORMANCE OF CAPACITOR

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to increase an interval of refresh time and improve performance of a capacitor by easily controlling and increasing capacitance and by reducing a leakage current. CONSTITUTION: A semiconductor substrate(21) is prepared in which a transistor region and a capacitor region are defined. An isolation layer(22) is formed on the semiconductor substrate to define an active region and an inactive region. At least one protruding pattern is formed on the substrate in the capacitor region. A gate oxide layer(23G) is formed on the substrate in the transistor region. A gate electrode(25G) is formed on the gate oxide layer, and a bottom plate electrode(25C) of a capacitor is formed on the substrate in the capacitor region having the protruding pattern. A source(28S) and a drain(28D) are formed, thereby forming a transistor in the transistor region. A dielectric layer(29) and a top plate electrode(30C) are formed on the bottom plate electrode so that the capacitor is formed in the capacitor region.