| 发明名称 |
ELECTROSTATIC DISCHARGE(ESD) PROTECTION CIRCUIT OF SEMICONDUCTOR DEVICE USING NMOS TRANSISTOR AND BIPOLAR TRANSISTOR CONNECTED WITH EACH OTHER IN PARALLEL BETWEEN VOLTAGE LINE AND POWER PAD FOR PROTECTING EFFECTIVELY DEVICE ITSELF FROM ESD |
| 摘要 |
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| 申请公布号 |
KR100470183(B1) |
申请公布日期 |
2005.01.26 |
| 申请号 |
KR19970043858 |
申请日期 |
1997.08.30 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, YEONG JUNG;KWON, GYU WAN |
| 分类号 |
H01L27/04;H01L27/10;(IPC1-7):H01L27/10 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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