METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE TO IMPROVE ELECTRICAL CHARACTERISTIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve an electrical characteristic of a semiconductor device by preventing a leakage current from being generated at the lower corner of an isolation layer. CONSTITUTION: A pad oxide layer(12) and a pad nitride layer(14) are deposited on a semiconductor substrate(10). The pad nitride layer and the pad oxide layer are sequentially patterned to form an isolation layer. The sidewall of the pad oxide layer is recessed by a cleaning process to round the lower corner of the isolation layer. A growth layer functioning as an active region is formed on the semiconductor substrate exposed to both sides of the isolation layer patterned by a deposition process.