METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE TO INCREASE REFRESH TIME INTERVAL AND EMBODY HIGH INTEGRATION

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to increase a refresh time interval and embody high integration by easily controlling a capacitance value of a capacitor in an MML(merged memory logic) device in which a logic device and a memory device are merged. CONSTITUTION: A semiconductor substrate(21) is prepared in which a transistor region and a capacitor region are defined. An isolation layer(22) is formed on the semiconductor substrate to define an active region and an inactive region. A gate oxide layer(23G) is formed on the substrate in the transistor region. A gate electrode is formed on the gate oxide layer, and a bottom plate electrode(25C) of a capacitor is formed on the substrate in the capacitor region. A source(28S) and a drain(28D) are formed so that a transistor is formed in the transistor region. A dielectric layer(29) and a top plate electrode(30C) are formed on the bottom plate electrode, thereby forming the capacitor in the capacitor region.