Memory circuit, display device and electronic equipment each comprising the same

摘要

A memory circuit using a thin film transistor has been problems such as the drop in yield and the decrease in speed of response of the memory circuit due to variations in transistors. The purpose of the invention is to improve the yield and speed of the response of a memory cell by driving a word line by a voltage which is different from the logical amplitude of the memory cell. The invention is applicable to an SRAM, a DRAM, a mask ROM, and the like. A memory circuit of the invention is formed integrally with a display device for realizing a multi-functional display device.