METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE TO PREVENT GENERATION OF MOAT FROM EDGE OF ISOLATION LAYER

摘要

PURPOSE: A method of forming an isolation layer of a semiconductor device is provided to prevent the generation of a moat from an edge of the isolation layer by oxidizing an exposed edge part of a silicon layer. CONSTITUTION: A laminated structure of a pad oxide layer(102), a silicon layer, and a pad nitride layer is formed on a semiconductor substrate(101) in order to open an isolation region. A trench is formed on the isolation region. An oxide layer(108) is formed by oxidizing a sidewall of the silicon layer. The trench is buried by an insulating material layer(109). A CMP process is performed to planarize the entire surface of the semiconductor substrate. The pad nitride layer and the silicon layer are removed therefrom.